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| 2N2060 Silicon NPN Transistor Data Sheet Description Semicoa Semiconductors offers: * Screening and processing per MIL-PRF-19500 Appendix E * JAN level (2N2060J) * JANTX level (2N2060JX) * JANTXV level (2N2060JV) * QCI to the applicable level * 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV * Radiation testing (total dose) upon request Applications * Matched, Dual Transistors * Low power * NPN silicon transistor Features * * * * Hermetically sealed TO-77 metal can Also available in chip configuration Chip geometry 0410 Reference document: MIL-PRF-19500/270 Benefits Please contact Semicoa for special configurations www.SEMICOA.com or (714) 979-1900 Absolute Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Power Dissipation, TA = 25C Derate linearly above 25C Power Dissipation, TC = 25C Derate linearly above 25C Operating Junction Temperature Storage Temperature Copyright 2002 Rev. G * Qualification Levels: JAN, JANTX, and JANTXV * Radiation testing available TC = 25C unless otherwise specified Symbol VCEO VCBO VEBO IC PT PT TJ TSTG Semicoa Semiconductors, Inc. Rating 60 100 7 500 540 one section 600 both sections 3.08 one section 3.48 both sections 1.5 one section 2.12 both sections 8.6 one section 12.1 both sections -65 to +200 Unit Volts Volts Volts mA mW mW mW/C mW/C W W mW/C mW/C C 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 1 of 1 www.SEMICOA.com 2N2060 Silicon NPN Transistor Data Sheet ELECTRICAL CHARACTERISTICS characteristics specified at TA = 25C Off Characteristics Parameter Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Base Cutoff Current Collector-Emitter Cutoff Current Collector-Emitter Cutoff Current Collector-Emitter Cutoff Current Emitter-Base Cutoff Current Symbol V(BR)CEO V(BR)CER ICBO1 ICBO2 ICBO3 ICEO ICEX ICES IEBO1 IEBO2 Test Conditions IC = 30 mA IC = 10 mA, RBE = 10 VCB = 100 Volts VCB = 80 Volts VCB = 80 Volts, TA = 150C VCE = xx Volts VCE = xx Volts, VEB = x Volts VCE = xx Volts VEB = 7 Volts VEB = 5 Volts 10 2 Min 60 80 10 2 10 Typ Max Units Volts Volts A nA A A A nA A nA On Characteristics Parameter Symbol hFE1 hFE2 hFE3 hFE4 hFE5 |VBE1 - VBE2|1 |VBE1 - VBE2|2 |VBE1 - VBE2|1 |VBE1 - VBE2|2 Test Conditions IC = 10 A, VCE = 5 Volts IC = 100 A, VCE = 5 Volts IC = 1 mA, VCE = 5 Volts IC = 10 mA, VCE = 5 Volts IC = 100 A, VCE = 5 Volts TA = -55C VCE = 5 Volts, IC = 100 A VCE = 5 Volts, IC = 1 mA VCE = 5 Volts, IC = 100 A TA = 25C and -55C VCE = 5 Volts, IC = 1 mA TA = 25C and +125C Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0% Min 25 30 40 50 10 Typ Max 75 90 120 150 Units DC Current Gain Base-Emitter Voltage Differential Base-Emitter Voltage Differential change with temperature 5 .8 1 mVolts mVolts Copyright 2002 Rev. G Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 2 of 2 www.SEMICOA.com 2N2060 Silicon NPN Transistor Data Sheet Dynamic Characteristics Parameter Magnitude - Common Emitter, Short Circuit Forward Current Transfer Ratio Small Signal Short Circuit Forward Current Transfer Ratio Open Circuit Output Capacitance Open Circuit Input Capacitance Symbol |hFE| hFE COBO CIBO NF1 NF2 Short Circuit Input Impedance Short Circuit Input Impedance Open Circuit Output Admittance hib hie hoe Test Conditions VCE = 10 Volts, IC = 50 mA, f = 20 MHz VCE = 5 Volts, IC = 1 mA, f = 1 kHz VCB = 10 Volts, IE = 0 mA, 100 kHZ < f < 1 MHz VEB = 0.5 Volts, IC = 0 mA, 100 kHZ < f < 1 MHz VCE = 10 Volts, IC = 300 A, f = 1 kHz, Rg = 510 VCE = 10 Volts, IC = 300 A, f = 10 kHz, Rg = 1 k VCB = 5V, IC = 1mA, f = 1kHz VCB = 5V, IC = 1mA, f = 1kHz VCB = 5V, IC = 1mA, f = 1kHz Min 3 50 Typ Max 25 150 15 85 8 dB 8 20 1 30 4 16 k mhos pF pF Units Noise Figure Copyright 2002 Rev. G Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 3 of 3 www.SEMICOA.com |
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